Hiroyuki Morita

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM

△ [20p-234A-5] Examination of film formation factor of solid phase epitaxy in room temperature of amorphous Ga₂O₃ by excimer laser annealing

〇(M1)Hiroyuki Morita¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)