Naoki Torii

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

2:45 PM - 3:00 PM

[20p-331-5] Effect of strained layer superlattice (SLS) on breakdown voltage of fully-vertical GaN p-n diodes on Si

〇(M1)Naoki Torii¹, Debaleen Biswas¹, Yamamoto Keiji¹, Egawa Takashi¹ (1.Nagoya Inst. of Tech.)