Hiroshi Ohta

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

[20p-331-8] Mesa-structure GaN p-n diodes fabricated by photoelectrochemical (PEC) etching

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)