Atsuki Aoai

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

9:00 AM - 9:15 AM

[21a-331-1] Characterization of Breakdown Field in Fe-doped Semi-insulating GaN Substrates

〇(M1)Atsuki Aoai¹, Kosuke Suzuki¹, Joel Asubar¹, Hirokuni Tokuda¹, Narihito Okada², Kazuyuki Tadatomo², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Yamaguchi Univ.)

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