Shoichi Murata

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

[21a-331-11] Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs

〇(M1)Shoichi Murata¹, Masataka Sasada¹, Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)