Keita Furuoka

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

[21a-331-3] Effects of H₂ ambient annealing on electrical properties of ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs

〇(M1)Keita Furuoka¹, Kubo Toshiharu¹, Egawa Takashi¹ (1.Nagoya Inst. of Tech.)