Yoshimi Yamashita

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

9:45 AM - 10:00 AM

[21a-331-4] A study of gate metal structure for InAlN/AlN/GaN HEMTs (II)

〇Yoshimi Yamashita¹, Yoshida Tomohiro², Makabe Isao², Watanabe Issei¹, Inoue Kazutaka², Kasamatsu Akifumi¹ (1.NICT, 2.SEI)