Takashi Nishitani

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-331-1~12] 13.7 Compound and power electron devices and process technology

10:15 AM - 10:30 AM

△ [21a-331-6] Characterization of AlGaN/GaN MOS-HEMTs with Gate Field Plate

〇(M1)Takashi Nishitani¹, Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Hirokuni¹ (1.Univ. of Fukui)