Haruka Fujiwara

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:15 PM - 5:00 PM 145 (Reception Hall)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[21p-145-1~14] 13.3 Insulator technology

1:30 PM - 1:45 PM

[21p-145-2] Characteristic change of GeO ₂ / Ge interface by Hf-Post Metallization Annealing

〇Haruka Fujiwara¹, Yoshitaka Iwazaki¹, Tomo Ueno¹, Yamada Hiroshi¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri. & Tech.)