Toshiyuki Oishi

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:45 PM - 4:00 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

3:15 PM - 3:30 PM

[21p-331-6] Diamond MOS FET characterisitcs after DC stress studied by TCAD

〇Toshiyuki Oishi¹, Takuya Kamogawa¹, Makoto Kasu¹ (1.Saga Univ.)