Ryosuke Aonuma

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:45 PM - 4:00 PM 331 (International Conference Room)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21p-331-1~8] 13.7 Compound and power electron devices and process technology

3:30 PM - 3:45 PM

[21p-331-7] Improvement in GaAsSb/InGaAs double-gate tunnel FET using Al₂O₃/ZrO₂ for gate insulator

〇(M2)Ryosuke Aonuma¹, Kise Nobukazu¹, Miyamoto Yasuyuki¹ (1.Tokyo Tech.)