SHOHEI HAYASHI

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21p-PB6-1~10] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 3:30 PM

[21p-PB6-9] Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

〇SHOHEI HAYASHI^1,2, Tamotsu Yamashita^1,3, Masaki Miyazato^1,4, Masaaki Miyajima^1,4, Junji Senzaki¹, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST, 2.TRC, 3.SHOWA DENKO, 4.Fuji Electric)

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