Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[18p-234B-1] Low temperature photoluminescence of GaAs grown at extremely high rate

〇Akinori Ubukata¹, Taketo Aihara², Sodabanlu Hassanet³, Ryuji Ohshima², Sugaya Takeyoshi², Kentaroh Watanabe³, Shuichi Koseki¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Yoshiaki Nakano⁴, Masakazu Sugiyama³ (1.Taiyo Nippon Sanso Corp., 2.AIST, 3.RCAST, The Univ. of Tokyo, 4.School of Engineering, The Univ. of Tokyo)

1:30 PM - 1:45 PM

△ [18p-234B-2] Influence of laser annealing on crystallinity of GaAs thin film on Si (001) substrate

〇Shoichi Kaneko¹, Koji Maeda¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

1:45 PM - 2:00 PM

△ [18p-234B-3] Quantification of Ga Adatom Surface Diffusion Length in GaP Growth by MBE

〇Koki Shiota¹, keisuke Yamane¹, Jose Alberto Piedra-Lorenzana¹, Hiroto Sekiguchi¹, Hiroshi Okada¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

2:00 PM - 2:15 PM

[18p-234B-4] Two-wavelength excitation photoluminescence study of upconversion luminescence from GaPN alloys

〇Wataru Takahashi¹, Kengo Takamiya¹, Shuhei Yagi¹, Yuji Hazama², Hidefumi Akiyama², Hiroyuki Yaguchi¹, Norihiko Kamata¹ (1.Saitama Univ., 2.ISSP, Univ. Tokyo)

2:15 PM - 2:30 PM

△ [18p-234B-5] Electrical properties of Ge-doped GaPN grown by molecular-beam epitaxy

〇Shunsuke Tanaka¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

2:30 PM - 2:45 PM

△ [18p-234B-6] First-principles study of the influence of N atomic configuration on the band structure of GaAsN

〇(M1)Yuta Tsukahara¹, Yagi Syuhei¹, Yaguchi Hiroyuki¹ (1.Saitama Univ.)

3:00 PM - 3:15 PM

[18p-234B-7] Growth of GaNAs nanowires with nitrogen over 2%

〇Ryo Fujiwara¹, Mitsuki Yukimune¹, Jansson Mattias², Chen Weimin², Buyanova Irina², Ishikawa Fumitaro¹ (1.Ehime Univ., 2.Linkoping Univ.)

3:15 PM - 3:30 PM

[18p-234B-8] Effects of GaAs-capping temperature on the emission wavelength of InAs quantum dots on nitrogen-doped GaAs (001) surfaces

〇Toshiyuki Kaizu^1,2, Naoto Uenishi¹, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ., 2.CSREA, Kobe Univ.)

3:30 PM - 3:45 PM

[18p-234B-9] Morphology change of strain-engineered stacked InAs quantum dots with modulated interlayers

〇(M2)Mikihito Suzuki¹, Kenichi Shimomura¹, Itaru Kamiya¹ (1.Toyota Tech. inst.)

3:45 PM - 4:00 PM

[18p-234B-10] Photon upconversion via submonolayer InAs structures

〇Hiroto Mizuno¹, Zhang Yuwei¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

4:00 PM - 4:15 PM

[18p-234B-11] PL mapping analysis of in-plane ultrahigh-density InAs-QD layer

〇Sho Tatsugi¹, Ryo Sugiyama¹, Koichi Yamaguchi¹ (1.Univ. of Electro-Comm.)

4:15 PM - 4:30 PM

[18p-234B-12] Self-Formation of InAs Quantum Dots on SiO_x/Semiconductor Substrates
by Molecular Beam Deposition (2)

〇Akinori Makaino¹, Katsuyoshi Sakamoto¹, Sogabe Tomah¹, Kouichi Yamaguchi¹ (1.Univ. Electro-Comm.)

4:45 PM - 5:00 PM

[18p-234B-13] Evaluation of strain in InAs thin films grown on Si (111) by Raman spectroscopy

〇Fumiya Kanbayashi¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

5:00 PM - 5:15 PM

[18p-234B-14] Sublattice Reversal in AlAs/Ge/AlAs Heterostructures Grown on (113)A GaAs Substrate

〇Xiangmeng Lu¹, Yasuo Minami¹, Takahiro Kitada¹ (1.Tokushima Univ.)

5:15 PM - 5:30 PM

[18p-234B-15] Polarization dependent PL from (001) GaAsBi/GaAs MQW grown by two substrate temperature growth

〇Homare Kambara¹ (1.Ehime Univ.)

5:30 PM - 5:45 PM

[18p-234B-16] PL polarization characteristics of GaAs/GaAsBi quantum well on (411)A GaAs substrate

〇Takumi Yamamoto¹, Toui Higuti¹, Akira Tukamoto¹, Saburo Tanaka¹, Homare Kanbara¹, Satoshi Shimomura¹ (1.Ehime Univ.)

5:45 PM - 6:00 PM

[18p-234B-17] Layer Thickness Dependence of Mid-Infrared Luminescence Properties in InAs /GaAsSb Superlattice Grown by MOVPE

〇Kouji Maeda¹, Ryosuke Wakaki¹, Yuya Yamagata¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

6:00 PM - 6:15 PM

[18p-234B-18] Influence of lattice relaxation anisotropy on relaxation processes of GaAsSb/GaAs(001)

〇(M2)Masaya Yuuki¹, Syouta Nogawa¹, Arai Masakazu¹, Yoshio Ohshita², Takuo Sasaki³, Masamitsu Takahasi³, Hidetoshi Suzuki¹ (1.Miyazaki Univ., 2.Toyota inst., 3.Quantum inst.)

6:15 PM - 6:30 PM

[18p-234B-19] Epitaxial growth of In0.2 Ga0.8 Sb on Si (111) substrate using surface reconstruction control method

〇Ren Igarashi¹, Mori Masayuki¹, Maezawa Koichi¹ (1.Univ. Toyama)

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