Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-146-1~12] 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Kazunobu Kojima(Tohoku Univ.), Mitsuru Funato(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [19a-146-1] Influence of off-cut angle on the thermal stability of m-plane GaN substrates

〇Kento Yoshida¹, Sakiko Yamanobe¹, Keita Konishi¹, Shinya Takashima², Masaharu Edo², Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. & Tech., 2.Fuji Electric Co., Ltd., 3.TUAT GIR)

9:15 AM - 9:30 AM

[19a-146-2] Proposal of GaN oxide-formed two-step wet-etching method

〇Yasuharu Kiyotou¹, Tetsuo Makie¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo University of Technology, 2.Institute of Industrial Science, the University of Tokyo)

9:30 AM - 9:45 AM

[19a-146-3] AlN Molar Fraction Dependence of TMAH Wet Etching on AlGaN

〇(M1)Shinji Yasue¹, Kosuke Sato^1,3, Yuta Kawase¹, Junya Ikeda¹, Yusuke Sakuragi¹, Sho Iwayama¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Nagoya Univ., 3.Asahi-Kasei)

9:45 AM - 10:00 AM

[19a-146-4] - Laser Induced Ohmic Contact Formation(LOC) - Laser Induced Formation of Local Ohmic Contact on p-GaN

〇Teruhisa Kawasaki¹, Noriko Kurose², Kota Matsumoto³, Naotaka Iwata³, Yoshinobu Aoyagi² (1.Sumitomo Heavy Inds., 2.Ritsumeikan Univ., 3.Toyota Tech. Inst.)

10:00 AM - 10:15 AM

△ [19a-146-5] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O₂ molecular beam irradiation

〇Yuya Asai^1,2, Keisuke Seki^1,3, Akitaka Yoshigoe⁴, Masato Sumita⁵, Takamasa Ishigaki³, Akira Uedono², Masatomo Sumiya¹ (1.NIMS, 2.Univ. of Tsukuba, 3.Hosei Univ., 4.JAEA, 5.RIKEN AIP)

10:15 AM - 10:30 AM

▲ [19a-146-6] Investigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layers

〇Li-wen SANG¹, Bing Ren¹, Meiyong Liao¹, Yasuo Koide¹, Masatomo Sumiya¹ (1.NIMS)

10:45 AM - 11:00 AM

[19a-146-7] Local phonon field analysis in InGaN by mapping measurements of Raman scattering

〇(M2)Naomichi Saito¹, Keisuke Takiguchi¹, Bei Ma¹, Ken Morita¹, Daisuke Iida², Kazuhiro Ohkawa², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.King Abdullah Univ.)

11:00 AM - 11:15 AM

[19a-146-8] Surface Plasmon Enhanced light-emissions from InGaN/GaN Multiple Quantum wells

〇(M1)Fumiya Murao¹, Toshiki Nakamura¹, Matsuyama Tetsuya¹, Wada Kenji¹, Funato Mitsuru², Kawakami Yoichi², Okamoto Koichi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

11:15 AM - 11:30 AM

[19a-146-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers

〇Satoshi Kurai¹, Kohei Okawa¹, Ryoga Makio¹, Junji Gao¹, Genki Nobata¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

11:30 AM - 11:45 AM

[19a-146-10] Analysis of efficiency curves of green emitting InGaN-based multiple quantum wells using rate equation for radiative and nonradiative recombination of excitons

Kazunori Shibuya¹, 〇Hideaki Murotani², Ayumu Yoneda¹, Yuki Hashiguchi¹, Hiroyuki Miyoshi¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoshiki Yano³, Toshiya Tabuchi³, Koh Matsumoto³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Col., 3.Taiyo Nippon Sanso Corp.)

11:45 AM - 12:00 PM

[19a-146-11] Photoluminescence Properties of InN Nano-Crystals Grown on Graphite by MBE

〇Shinichiro Mouri¹, Shingo Arakawa¹, Darius Dobrovolskas², Juras Mickevicius², Gintautas Tamulaitis², Yasushi Nanishi¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Vilnius Univ.)

12:00 PM - 12:15 PM

▲ [19a-146-12] Measurement of the excitation laser wavelength dependence of spectral diffusion from a single InGaN quantum dot

〇(P)Kang Gao¹, Helen Springbett³, Tongtong Zhu³, Rachel Oliver³, Yasuhiko Arakawa¹, Mark Holmes^1,2 (1.NanoQuine, 2.IIS, Univ. of Tokyo, 3.Univ. of Cambridge)

Session information

[19a-146-1~12] 15.4 III-V-group nitride crystals

△ [19a-146-1] Influence of off-cut angle on the thermal stability of m-plane GaN substrates

[19a-146-2] Proposal of GaN oxide-formed two-step wet-etching method

[19a-146-3] AlN Molar Fraction Dependence of TMAH Wet Etching on AlGaN

[19a-146-4] - Laser Induced Ohmic Contact Formation(LOC) - Laser Induced Formation of Local Ohmic Contact on p-GaN

△ [19a-146-5] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O₂ molecular beam irradiation

▲ [19a-146-6] Investigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layers

[19a-146-7] Local phonon field analysis in InGaN by mapping measurements of Raman scattering

[19a-146-8] Surface Plasmon Enhanced light-emissions from InGaN/GaN Multiple Quantum wells

[19a-146-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers

[19a-146-10] Analysis of efficiency curves of green emitting InGaN-based multiple quantum wells using rate equation for radiative and nonradiative recombination of excitons

[19a-146-11] Photoluminescence Properties of InN Nano-Crystals Grown on Graphite by MBE

▲ [19a-146-12] Measurement of the excitation laser wavelength dependence of spectral diffusion from a single InGaN quantum dot

Authentication

Session information

[19a-146-1~12] 15.4 III-V-group nitride crystals

△ [19a-146-1] Influence of off-cut angle on the thermal stability of m-plane GaN substrates

△ [19a-146-5] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O2 molecular beam irradiation

▲ [19a-146-6] Investigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layers

▲ [19a-146-12] Measurement of the excitation laser wavelength dependence of spectral diffusion from a single InGaN quantum dot

Authentication

△ [19a-146-5] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O₂ molecular beam irradiation