Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-146-1~22] 15.4 III-V-group nitride crystals

Wed. Sep 19, 2018 1:15 PM - 7:15 PM 146 (Reception Hall)

Mark Holmes(The University of Tokyo), Jun Tatebayashi(Osaka Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[19p-146-1] Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices

〇Takahiro Kawamura¹, Yuma Fujita¹, Yuya Hamaji¹, Toru Akiyama¹, Yoshihiro Kangawa² (1.Mie Univ., 2.RIAM, Kyushu Univ.)

1:30 PM - 1:45 PM

[19p-146-2] Optical characterization of h-BN single crystals with external quantum efficiency larger than 4% for near-band-edge emission

〇Kazunobu Kojima¹, Kenji Watanabe², Takashi Taniguchi², Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.NIMS)

1:45 PM - 2:00 PM

[19p-146-3] Luminescence dynamics of h-BN films gown by chemical vapor deposition on sapphire

〇Shigefusa Chichibu¹, Kohei Shima¹, Naoki Umehara², Kazunobu Kojima¹, Kazuhiko Hara^3,2 (1.IMRAM, Tohoku Univ., 2.GSST-Shizuoka Univ., 3.RIE-Shizuoka Univ.)

2:00 PM - 2:15 PM

[19p-146-4] Local exciton response on GaN using spatio-time-resolved photoluminescence

〇(M2)Akinori Kamiyama¹, Kazunobu Kojima², Go Yusa¹, Shigefusa F. Chichibu² (1.Tohoku Univ., 2.IMRAM-Tohoku Univ.)

2:15 PM - 2:30 PM

▲ [19p-146-5] Observation of sharp emission lines in the photoluminescence spectrum of a Zn doped GaN Quantum well

〇(P)Kang Gao¹, Tomoyuki Aoki², Munetaka Arita¹, Yasuhiko Arakawa¹, Mark Holmes^1,2 (1.NanoQuine, 2.IIS, Univ. of Tokyo)

2:30 PM - 2:45 PM

[19p-146-6] Effects of p-AlGaN layer thickness on the properties of deep-UV AlGaN LEDs

〇Shunsuke Kuwaba^1,2, Yuri Itokazu^1,2, Masafumi Jo², Norihiko Kamata¹, Hideki Hirayama² (1.Saiatama Univ., 2.Riken)

2:45 PM - 3:00 PM

[19p-146-7] Increase in emission intensity of UV LED using p-type graded AlGaN superlattices

〇Kazuaki Ebata¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

3:15 PM - 3:30 PM

▲ [19p-146-8] Reflectance of Reflective Photonic Crystal on P-contact Layer of AlGaN Deep-UV LED

〇(P)Joosun Yun¹, Yukio Kashima², Hideki Hirayama¹ (1.RIKEN, 2.Marubun Corporation)

3:30 PM - 3:45 PM

△ [19p-146-9] Substrate off-angle and direction dependences on DUV-LED characteristics

〇Hisanori Kojima¹, Takuma Ogasawara¹, Myunghee Kim¹, Kazuyoshi Iida¹, Norikatsu Koide¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ)

3:45 PM - 4:00 PM

△ [19p-146-10] Deep ultraviolet laser formed on AlGaN/annealed sputtered AlN template

〇(M2)Yuta Kawase¹, Jyunya Ikeda¹, Yusuke Sakuragi¹, Shinji Yasue¹, Syo Iwayama^1,3, Myunghee Kim¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kaymiyama¹, Isamu Akasaki^1,2, Hideto Miyake³ (1.Department of Materials Science and Engineering, Meijo University, 2.Akasaki Research Center, Nagoya University, 3.Graduate School of Regional Innovation Studies)

4:00 PM - 4:15 PM

[19p-146-11] Optical properties of (11-22) AlGaN quantum wells grown on m-plane sapphire

〇Masafumi Jo¹, Yuri Itokazu¹, Hideki Hirayama¹ (1.RIKEN)

4:15 PM - 4:30 PM

[19p-146-12] Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

〇Yuri Itokazu^1,2, Shunsuke Kuwaba^1,2, Masafumi Jo², Norihiko Kamata¹, Hideki Hirayama² (1.Saitama Univ, 2.Riken)

4:30 PM - 4:45 PM

△ [19p-146-13] Stripe orientation dependence for epitaxial lateral over growth of AlN template

〇Fijun Kim¹, Takahiro Saito², Sachie Fujikawa⁴, Noritoshi Maeda³, Narihito Okada¹, Hideki Hirayama³, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ., 3.RIKEN, 4.Tokyo Denki Univ.)

4:45 PM - 5:00 PM

[19p-146-14] High-temperature AlN growth by ammonia-free metalorganic vapor phase epitaxy

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹, Mitsuaki Shimizu¹, Hajime Okumura¹ (1.AIST)

5:15 PM - 5:30 PM

[19p-146-15] Fabrication of high aspect GaN structures by hydrogen atmosphere anisotropic thermal etching(HEATE) method with addition of ammonia gas.

〇Yusei Kawasaki¹, Akihiro Matsuoka¹, Yusuke Namae¹, Yuki Ooe¹, Daichi Ito¹, Yuta Moriya¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology)

5:30 PM - 5:45 PM

[19p-146-16] Size-dependent optical characterization of InGaN/GaN multi quantum well based nanopillars fabricated by Hydrogen Environment Anisotropic Thermal Etching (HEATE)

〇Yusuke Namae¹, Daichi Ito¹, Yusei Kawasaki¹, Yuki Ohe¹, Akihiro Matsuoka¹, Yuta Moriya¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

5:45 PM - 6:00 PM

[19p-146-17] Suppression of yellow luminescence of MBE grown GaN nanowires

〇(M1)Tomohiro Uesugi¹, Takuo Sasaki², Masamitu Takahasi^1,2 (1.Univ. of Hyogo, 2.QST)

6:00 PM - 6:15 PM

[19p-146-18] Fabrication of optical waveguide structures by changing diameter of regularly arrayed GaN nanocolumns

〇(M1)Daiki Hatakeyama¹, Kazuki Narita¹, Takao Oto³, Rie Togashi^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech., 3.Yamagata Univ.)

6:15 PM - 6:30 PM

[19p-146-19] Mechanism of Light Emission Enhancement in InGaN/GaN Nanocolumn Plasmonic Crystals

〇Kazuma Kikuchi¹, Takao Oto³, Koichi Okamoto⁴, Rie Togashi¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech., 3.Yamagata Univ., 4.Osaka Pref. Univ.)

6:30 PM - 6:45 PM

[19p-146-20] Emission Color Change Mechanism for Densely-packed Regularly Arranged InGaN Nanocolumns

〇Kazuki Narita¹, Takao Oto³, Rie Togashi¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech., 3.Yamagata Univ.)

6:45 PM - 7:00 PM

[19p-146-21] Structural analysis of m-plane Ga_1-xIn_xN/GaN multi-quantum wells grown on GaN nanowires by using an X-ray nano-beam

〇Tsurugi Kondo¹, Ryoma Seiki¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura², Kenta Takagi¹, Nanami Goto¹, Takato Ichikawa¹, Daichi Imai¹, Satoshi Kamiyama¹, Takao Miyajima¹ (1.Meijo Univ., 2.Japan Synchrotron Radiation Research Inst.)

7:00 PM - 7:15 PM

△ [19p-146-22] Optical simulation of GaInN based Multi-Quantum-Shell (MQS) LED using n-GaN current diffusing layer

〇Mizuki Terazawa¹, Masaki Ohya^1,3, Kazuyoshi Iida^1,3, Naoki Sone^1,4, Atsushi Suzuki¹, kyohei Nokimura¹, Minoru Takebayashi¹, Nanami Goto¹, Hideki Murakami¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Toyoda Gosei Co., Ltd, 4.Koito Manufacturing CO., LTD)

Session information