Symposium (Oral)
[19p-432-1~8] Recent Progresses and Developments of Si Integrated Circuit Technologies with 3D Integrations
Wed. Sep 19, 2018 1:45 PM - 5:30 PM 432 (432)
Shin-Ichiro Kuroki(Hiroshima Univ.), Makoto Nakamura(Fujitsu Labs)
△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above
1:45 PM - 2:15 PM
〇Takayuki Ohba1 (1.Tokyo Tech)
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2:15 PM - 2:45 PM
〇Mitsumasa Koyanagi1 (1.Tohoku Univ.)
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2:45 PM - 3:15 PM
〇Kyohei Mizuta1, Hidenobu Tsugawa1, Ryoichi Nakamura1, Tomohiro Takahashi1, Masaki Sakakibara1, Susumu Ohki1, Keiji Tatani1 (1.Sony Semiconductor Solutions Corporation)
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3:15 PM - 3:45 PM
〇Masahiro Aoyagi1 (1.AIST)
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4:00 PM - 4:30 PM
〇Masayoshi Tagami1, Ryota Katsumata1 (1.Toshiba Memory Corp.)
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4:30 PM - 4:45 PM
[19p-432-6] Direct Bonding of SiO2/Si Wafers at Room Temperature Using Self-Sputtered Bonding Method
〇Jun Utsumi1 (1.Mitsubishi Heavy Industries Machine Tool Co., Ltd.)
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4:45 PM - 5:00 PM
〇Masahide Goto1, Yuki Honda1, Toshihisa Watabe1, Kei Hagiwara1, Masakazu Nanba1, Yoshinori Iguchi1, Takuya Saraya2, Masaharu Kobayashi2, Eiji Higurashi2, Hiroshi Toshiyoshi2, Toshiro Hiramoto2 (1.NHK, 2.Univ. of Tokyo)
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5:00 PM - 5:30 PM
〇Masahisa Fujino1, Tadatomo Suga2 (1.AIST, 2.Univ. Tokyo)
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