The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-146-1~13] 15.4 III-V-group nitride crystals

Tue. Sep 18, 2018 9:00 AM - 12:30 PM 146 (Reception Hall)

Ryuji Katayama(Osaka Univ.), Hiroto Sekiguchi(Toyohashi University of Technology)

11:45 AM - 12:00 PM

[18a-146-11] Application of PSD-grown heavily doped GaN for tunnel junction devices

〇Taiga Fudetani1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS, UTokyo, 2.JST-ACCEL)

Keywords:GaN, sputtering, tunnel junction