Taiga Fudetani

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 9:00 AM - 12:30 PM 146 (Reception Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-146-1~13] 15.4 III-V-group nitride crystals

11:45 AM - 12:00 PM

[18a-146-11] Application of PSD-grown heavily doped GaN for tunnel junction devices

〇Taiga Fudetani¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS, UTokyo, 2.JST-ACCEL)