Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-146-1~13] 15.4 III-V-group nitride crystals

Tue. Sep 18, 2018 9:00 AM - 12:30 PM 146 (Reception Hall)

Ryuji Katayama(Osaka Univ.), Hiroto Sekiguchi(Toyohashi University of Technology)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-146-1] Vector mapping of polarization of m-GaN by laser THz emission microscope

〇Yuji Sakai¹, Iwao Kawayama², Hao Jiang², Hidetoshi Nakanishi³, Hironaru Murakami², Akira Oiwa¹, Masayoshi Tonouchi² (1.ISIR, Osaka Univ., 2.ILE, Osaka Univ., 3.SCREEN)

9:15 AM - 9:30 AM

[18a-146-2] Inhomogeneous Structure of N-Polar InGaN/GaN Quantum Well

〇Takanori Kiguchi¹, Takahisa Shiraishi¹, Yumiko Kodama¹, Toyohiko J. Konno¹, Tomoyuki Tanikawa¹ (1.Tohoku Univ.)

9:30 AM - 9:45 AM

[18a-146-3] Numerical data extraction of 3D configuration of dislocations in GaN crystals from multiphoton-excitation photoluminescence images

〇Kentaro Kutsukake¹, Tomoyuki Tanikawa², Takashi Matsuoka², Kenichi Inoue¹ (1.Nagoya Univ., 2.Tohoku Univ.)

9:45 AM - 10:00 AM

[18a-146-4] 【Highlighted Presentation】Propagation behavior of threading dislocations and evolution of epitaxially-lateral overgrowth in HVPE-grown GaN measured by multiphoton-excitation photoluminescence

〇Tomoyuki Tanikawa¹, Takehiro Yoshida², Takashi Matsuoka¹ (1.IMR, Tohoku Univ., 2.SCIOCS)

10:00 AM - 10:15 AM

[18a-146-5] Classification and behavior of dislocations propagating
from GaN substrate to epitaxial film

〇Sho Inotsume^1,2, Nobuhiko Kokubo^1,2, Hisashi Yamada², Shoichi Onda¹, Junji Ohara¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya University, 2.AIST GaN-OIL)

10:15 AM - 10:30 AM

△ [18a-146-6] Electronic structure analysis at threading dislocation in GaN

〇Takashi Nakano¹, Kenta Chokawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.Graduduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:30 AM - 10:45 AM

[18a-146-7] [Young Scientist Presentation Award Speech] Strain Field Analysis of Threading Dislocations in GaN Single Crystal Using Raman Spectroscopy

〇Nobuhiko Kokubo^1,2, Tsunooka Yosuke^1,2, Fujie Fumihiro¹, Ohara Junji¹, Onda Shoichi¹, Yamada Hisashi², Shimizu Mitsuaki², Harada Shunta¹, Tagawa Miho¹, Ujihara Toru^1,2 (1.Nagoya Univ., 2.AIST)

11:00 AM - 11:15 AM

[18a-146-8] Structural analysis of Ga adlayers on GaN surface

〇Takuo Sasaki¹, Takuya Iwata², Masamitu Takahasi^1,2 (1.QST, 2.Univ. Hyogo)

11:15 AM - 11:30 AM

[18a-146-9] Growth and characterization of high electron mobility n-type GaN prepared by PSD

〇Kohei Ueno¹, Keita Shibahara¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

11:30 AM - 11:45 AM

[18a-146-10] Growth and characterization of high electron mobility n-type GaN prepared by PSD

〇Keita Shibahara¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS, UTokyo., 2.JST-ACCEL)

11:45 AM - 12:00 PM

[18a-146-11] Application of PSD-grown heavily doped GaN for tunnel junction devices

〇Taiga Fudetani¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS, UTokyo, 2.JST-ACCEL)

12:00 PM - 12:15 PM

[18a-146-12] Homoepitaxial growth of transferable GaN using graphene as sacrificial layer

〇Ukyo Ooe¹, Shinichiro Mouri¹, Yasushi Nanishi¹, Tsutomu Araki¹ (1.Ritsumeikan Univ.)

12:15 PM - 12:30 PM

[18a-146-13] MBE Growth of GaN Thin films on Sapphire Substrates Using h-BN/AlN Buffer Layers

〇Yasuyuki Kobayashi¹, Keiichi Nakata¹, Hideki Nakazawa¹, Hiroshi Okamoto¹, Masanobu Hiroki², Kazuhide Kumakura² (1.Hirosaki Univ., 2.NTT BRL)

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