[18a-146-1~13] 15.4 III-V-group nitride crystals

[18a-146-12] Homoepitaxial growth of transferable GaN using graphene as sacrificial layer

〇Ukyo Ooe¹, Shinichiro Mouri¹, Yasushi Nanishi¹, Tsutomu Araki¹ (1.Ritsumeikan Univ.)

Keywords:Gallium Nitride, Molecular Beam Epitaxy, graphene

We try to realize homoepitaxal growth of removable and transferable nitride semiconductors using graphene sacrificial layer. High quality crystal as same as substrate can be obtained using this method. We confirmed that the small grains of GaN with random orientations were grown on graphene because of plasma damage on surface of graphene. In the presentation, we will discuss the method to reduce plasma damage and possibility of homoepitaxy using graphene layer.