[18a-146-1~13] 15.4 III-V-group nitride crystals

[18a-146-7] [Young Scientist Presentation Award Speech] Strain Field Analysis of Threading Dislocations in GaN Single Crystal Using Raman Spectroscopy

〇Nobuhiko Kokubo^1,2, Tsunooka Yosuke^1,2, Fujie Fumihiro¹, Ohara Junji¹, Onda Shoichi¹, Yamada Hisashi², Shimizu Mitsuaki², Harada Shunta¹, Tagawa Miho¹, Ujihara Toru^1,2 (1.Nagoya Univ., 2.AIST)

Keywords:gallium nitride, dislocation, Raman spectroscopy

In this study, we focused on the possibility of dislocation evaluation by strain field analysis using Raman spectroscopy. Since the peaks in the Raman spectrum are shifted by the strain, if the peak shift is mapped and the strain field of the dislocation can be observed, the Burgers vector of the dislocation can be identified. In this study, we compared the mapping of peak shift, etching and simulation to classify edge components of threading dislocations in GaN single crystal.