The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-146-1~13] 15.4 III-V-group nitride crystals

Tue. Sep 18, 2018 9:00 AM - 12:30 PM 146 (Reception Hall)

Ryuji Katayama(Osaka Univ.), Hiroto Sekiguchi(Toyohashi University of Technology)

11:15 AM - 11:30 AM

[18a-146-9] Growth and characterization of high electron mobility n-type GaN prepared by PSD

〇Kohei Ueno1, Keita Shibahara1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

Keywords:GaN, Sputtering