[18a-223-1~9] 6.3 Oxide electronics

[18a-223-7] Design Rule of VO₂-Channel Mott Transistors for Ultra-low Voltage Operation

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Keywords:metal-insulator transition, VO2, Mott transistor

An ultra-sharp switching property with the subthreshold swing below 1mV/dec is obtained in a VO₂-channel Mott transistor. The V_g-V_d phase diagram indicates "an ultra-sharp switching occurs when the applied drain voltage overcomes the fluctuation inside the VO₂ channel," elucidating the design rule of the Mott transistor.