[18a-224B-1~10] 17.3 Layered materials

△ [18a-224B-7] In-situ measurement of WS₂ growth during chemical vapour deposition

〇(D)Chao Li¹, Toshiro Kaneko¹, Toshiaki Kato^1,2 (1.Tohoku Univ., 2.JST PRESTO)

Keywords:WS2, synthesis, in-situ measurement

Transition metal dichalcogenides (TMDs) attracted very intense attention for next generation flexible and transparent semiconductor device because of their super electrical and optical features. To fully utilize the potential abilities of TMD in industrial applications, controlled synthesis of high quality TMD is inevitable issue. Understanding the growth mechanism of TMD can contribute to realizing such detailed-structural tuning of TMD. In this study, we have succeeded in realizing in-situ measurement of CVD growth of WS₂ by using Au-dot seeding technique. The possible growth model of TMD can also be provided based on the experimental results of in-situ measurements.