The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.6 Plasma Electronics English Session

[18a-234A-1~5] 8.6 Plasma Electronics English Session

Tue. Sep 18, 2018 9:00 AM - 10:15 AM 234A (234-1)

Koichi Sasaki(Hokkaido Univ.)

9:15 AM - 9:30 AM

[18a-234A-2] Influence of gas flow rate on deposition of carbon nanoparticles produced by CH4+Ar multi-hollow discharge plasma onto substrates

SungHwa Hwang1, Kunihiro Kamataki1, Naho Itagaki1, Kazunori Koga1, Masaharu Shiratani1 (1.Kyushu Univ)

Keywords:plasma, carbon nano particles

Carbon nano material has been used in a range of research fields due to its extensive characteristics. In particular, reproducibility and uniformity of carbon materials are considered as the main issues of their application. In this study, we synthesize carbon nano particles by using methane plasma process at different gas conditions. In addition, we investigate the deposition on substrate following the particle size and gas flow.