Formation of a large-grained GaAs film using Al-induced crystallized Ge as a seed layer

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

Tue. Sep 18, 2018 9:30 AM - 11:45 AM 235 (3Ｆ_Lounge２)

Kentarou Sawano(Tokyo City Univ.)

11:15 AM - 11:30 AM

〇Takeshi Nishida¹, Masaya Saito¹, Kenta Moto¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

Keywords:layer exchange, GaAs, MBE