[18p-143-1~15] 6.6 Probe Microscopy

△ [18p-143-8] Variable frequency measurements of ∂ C/∂ V in electrostatic force microscopy with dual bias modulation

〇Ryota Fukuzawa¹, Takuji Takahashi^1,2 (1.IIS, The Univ. of Tokyo, 2.NanoQuine, The Univ. of Tokyo)

Keywords:electrostatic force microscopy, frequency responce, depletion capacitance

To realize \partial C/∂ V measurements by electrostatic force microsopy at various frequencies, we propose a dual bias modulation method, in which apply a,c, biases. We measured \partial C/∂ V at low and high freaquencies on the surface of Zn(O,S)/Cu(In,Ga)Se₂ . As a result, clear dependence on the freaquency is recognized. It is expected that dual bias method contribute to discuss the influence in a similar way to the conventional capacitance-voltage (C-V) measurements.