[18p-146-1~8] New Process Technology of Nitride Semiconductors

[18p-146-7] High-temperature annealing of sputtered AlN film and fabrication of AlGaN deep-UV LED on the substrate

Nagamatsu Kentaro¹, Uesugi Kenjiro¹, Shojiki Kanako², Yoshida Harumasa¹, 〇Hideto Miyake^2,3 (1.OPRI, Mie Univ., 2.Eng., Mie Univ., 3.RIS, Mie Univ.)

Keywords:AlN, Nitride semiconductor, annealing