[18p-212B-1~11] 【CS.8】 Code-sharing Session of 7.4 & 9.5

[18p-212B-1] Structure and Properties of Nanometer-Thick Ferroelectric Films Formed by Chemical Solution Deposition and Crystallization

〇Gai Fujiki¹, Hideki Murakami¹, Atsushi Kohno², Takayuki Tajiri² (1.Kurume NCT, 2.Fukuoka Univ.)

Keywords:bismuth-layer-structured ferroelectric thin film, ferroelectric nanocrystal, optical absorption edge

The chemical solution deposition process for ferroelectric Bi4-xLaxTi3O12 (BLT) nanofilms on Si(100) substrates has been developed. The structural analysis of ~5 nm-thick BLT films by using X-ray diffraction and X-ray reflectivity revealed that the BLT films consisted of nanocrystals. It was also suggested that SiOx thin layer and a low density layer of BLT were formed at BLT/Si interface. The optical absorption edges of BLT nanofilms were analyzed by using spectroscopic ellipsometry method. The hysteresis in capacitance-voltage characteristics of metal-ferroelectric-semiconductor (MFS) structure was observed.