[18p-212B-1~11] 【CS.8】 Code-sharing Session of 7.4 & 9.5

[18p-212B-8] X-ray Induced force changes on a Ge surface in XANAM measurements

〇Shushi Suzuki¹, Shingo Mukai², Wang-Jae Chun³, Masaharu Nomura⁴, Kiyotaka Asakura² (1.Nagoya Univ., 2.Hokkaido Univ., 3.ICU, 4.KEK-PF)

Keywords:Synchrotron Radiation X-ray, Noncontact Atomic Force Microscopy, semiconductor

We have developed "X-ray Aided Atomic Force Microscopy (XANAM)" as a method to identify the elements with identifying individual nanostructures at a surface/interface. We investigated X-ray induced change in the tip-surface atomic force and proposed the method of obtaining element mapping by using a sample of Ni nanoparticles on HOPG. In this report, we applied the spectroscopy measurements to a Ge semiconductor sample surface and found that changes in the tip-surface force induced by X-ray like the former case of Ni.