[18p-232-1~17] 3.13 Semiconductor optical devices

▲ [18p-232-4] Investigation of energy transfer between europium centers in GaN:Eu using combined excitation emission spectroscopy

〇(PC)Delphine Misao Lebrun¹, Hiroaki Kogame¹, Wanxin Zhu¹, Brandon J. Mitchell², Yasufumi Fujiwara¹ (1.Osaka Univ., 2.West Chester Univ.)

Keywords:LED, europium, photoluminescence

Establishing an all GaN based red LED is an important step toward micro-LED displays, which are the next step in a rapidly growing “smart society”, so we have grown, with organometallic vapor phase epitaxy, GaN:Eu red emitting LEDs. We use combined excitation emission spectroscopy and two-photons excitation setup to gain a more fundamental understanding of the energy transfer between the defect levels in the host GaN and the europium centers.