2018年第79回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.6 Plasma Electronics English Session

[18p-234A-1~3] 8.6 Plasma Electronics English Session

2018年9月18日(火) 12:00 〜 12:45 234A (234-1)

酒井 道(滋賀県立大)

12:00 〜 12:15

[18p-234A-1] Etching of glass by floating-wire assisted atmospheric pressure plasma

〇(PC)Thi-Thuy-Nga Nguyen1、Minoru Sasaki2、Hidefumi Odaka3、Takayoshi Tsutsumi1、Kenji Ishikawa1、Masaru Hori1 (1.Nagoya Univ.、2.Toyota Tech. Inst.、3.Asahi Glass Co.)

キーワード:glass etching, atmospheric pressure plasma, inductively coupled plasma

Dry etching of glass is generally exhibited very low etch rates. By using a long floating wire, it is possible to ignite plasma at atmospheric pressure and generate plasma at a remote region. Here we have developed a high-density atmospheric pressure inductively coupled plasma that can be remotely generated by placing a 170-mm-long floating wire inside of a discharge tube. The 200-mm-high L-tube having a slit at the bottom was used to remotely generate a plasma with an electron density of 1014 cm-3 for a large treatment area. By introducing SF6 gas to the region where an Ar plasma blew out from the slit of the L-tube, a quartz glass plate (15x20 mm2) could be etched for a large area with a maximum etch rate of 1.7 µm/min and an average substrate removal rate of 0.3 mm3/min. The high-density plasma remotely generated from the L-shaped discharge tube could be developed for high-rate and large-scale glass etching applications.