[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-1] Low temperature photoluminescence of GaAs grown at extremely high rate

〇Akinori Ubukata¹, Taketo Aihara², Sodabanlu Hassanet³, Ryuji Ohshima², Sugaya Takeyoshi², Kentaroh Watanabe³, Shuichi Koseki¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Yoshiaki Nakano⁴, Masakazu Sugiyama³ (1.Taiyo Nippon Sanso Corp., 2.AIST, 3.RCAST, The Univ. of Tokyo, 4.School of Engineering, The Univ. of Tokyo)

Keywords:Solar cells, MOCVD, GaAs

GaAs based solar cells are attractive for their high conversion efficiency. However, the high price per watt performance limits their application, notably, in the area of space applications and concentrated photovoltaics. We had improved throughput of epitaxial growth of GaAs-based solar cell structure, and the growth rate was boosted up to 125 micron/h. A single junction-GaAs solar cells grown at 90 micron/h exhibited good performance. In this study, we report on the low temperature photoluminescence of GaAs grown at high rate. Exciton emission lines due to neutral acceptor were observed with the samples grown at even 90 micron/h and V/III in the range from 5 to 40, which indicates that crystalline quality is still not degraded.