Oral presentation
[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)
Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)
△:Presentation by Applicant for JSAP Young Scientists Presentation Award
▲:English Presentation
▼:Both of Above
No Mark:None of Above
1:15 PM - 1:30 PM
〇Akinori Ubukata1, Taketo Aihara2, Sodabanlu Hassanet3, Ryuji Ohshima2, Sugaya Takeyoshi2, Kentaroh Watanabe3, Shuichi Koseki1, Yoshiki Yano1, Toshiya Tabuchi1, Koh Matsumoto1, Yoshiaki Nakano4, Masakazu Sugiyama3 (1.Taiyo Nippon Sanso Corp., 2.AIST, 3.RCAST, The Univ. of Tokyo, 4.School of Engineering, The Univ. of Tokyo)
1:30 PM - 1:45 PM
△ [18p-234B-2] Influence of laser annealing on crystallinity of GaAs thin film on Si (001) substrate
〇Shoichi Kaneko1, Koji Maeda1, Tetsuo Ikari1, Atsuhiko Fukuyama1, Hidetoshi Suzuki1 (1.Miyazaki Univ.)
1:45 PM - 2:00 PM
〇Koki Shiota1, keisuke Yamane1, Jose Alberto Piedra-Lorenzana1, Hiroto Sekiguchi1, Hiroshi Okada1, Akihiro Wakahara1 (1.Toyohashi Tech.)
2:00 PM - 2:15 PM
〇Wataru Takahashi1, Kengo Takamiya1, Shuhei Yagi1, Yuji Hazama2, Hidefumi Akiyama2, Hiroyuki Yaguchi1, Norihiko Kamata1 (1.Saitama Univ., 2.ISSP, Univ. Tokyo)
2:15 PM - 2:30 PM
〇Shunsuke Tanaka1, Keisuke Yamane1, Hiroto Sekiguchi1, Hiroshi Okada1, Akihiro Wakahara1 (1.Toyohashi Tech.)
2:30 PM - 2:45 PM
〇(M1)Yuta Tsukahara1, Yagi Syuhei1, Yaguchi Hiroyuki1 (1.Saitama Univ.)
3:00 PM - 3:15 PM
〇Ryo Fujiwara1, Mitsuki Yukimune1, Jansson Mattias2, Chen Weimin2, Buyanova Irina2, Ishikawa Fumitaro1 (1.Ehime Univ., 2.Linkoping Univ.)
3:15 PM - 3:30 PM
〇Toshiyuki Kaizu1,2, Naoto Uenishi1, Takashi Kita1 (1.Grad. Sch. of Eng., Kobe Univ., 2.CSREA, Kobe Univ.)
3:30 PM - 3:45 PM
〇(M2)Mikihito Suzuki1, Kenichi Shimomura1, Itaru Kamiya1 (1.Toyota Tech. inst.)
3:45 PM - 4:00 PM
〇Hiroto Mizuno1, Zhang Yuwei1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
4:00 PM - 4:15 PM
〇Sho Tatsugi1, Ryo Sugiyama1, Koichi Yamaguchi1 (1.Univ. of Electro-Comm.)
4:15 PM - 4:30 PM
〇Akinori Makaino1, Katsuyoshi Sakamoto1, Sogabe Tomah1, Kouichi Yamaguchi1 (1.Univ. Electro-Comm.)
4:45 PM - 5:00 PM
〇Fumiya Kanbayashi1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Kazuo Tsutsui1 (1.Tokyo Tech)
5:00 PM - 5:15 PM
〇Xiangmeng Lu1, Yasuo Minami1, Takahiro Kitada1 (1.Tokushima Univ.)
5:15 PM - 5:30 PM
〇Homare Kambara1 (1.Ehime Univ.)
5:30 PM - 5:45 PM
〇Takumi Yamamoto1, Toui Higuti1, Akira Tukamoto1, Saburo Tanaka1, Homare Kanbara1, Satoshi Shimomura1 (1.Ehime Univ.)
5:45 PM - 6:00 PM
〇Kouji Maeda1, Ryosuke Wakaki1, Yuya Yamagata1, Masakazu Arai1 (1.Univ. of Miyazaki)
6:00 PM - 6:15 PM
[18p-234B-18] Influence of lattice relaxation anisotropy on relaxation processes of GaAsSb/GaAs(001)
〇(M2)Masaya Yuuki1, Syouta Nogawa1, Arai Masakazu1, Yoshio Ohshita2, Takuo Sasaki3, Masamitsu Takahasi3, Hidetoshi Suzuki1 (1.Miyazaki Univ., 2.Toyota inst., 3.Quantum inst.)
6:15 PM - 6:30 PM
〇Ren Igarashi1, Mori Masayuki1, Maezawa Koichi1 (1.Univ. Toyama)