The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

5:00 PM - 5:15 PM

[18p-234B-14] Sublattice Reversal in AlAs/Ge/AlAs Heterostructures Grown on (113)A GaAs Substrate

〇Xiangmeng Lu1, Yasuo Minami1, Takahiro Kitada1 (1.Tokushima Univ.)

Keywords:sublattice reversal, MBE, heterostructures

We have demonstrated sublattice reversal (SR) in GaAs/Ge/GaAs heterostructures on high-index (113)B GaAs substrates grown by molecular beam epitaxy (MBE) in our previous research. However, SR was not achieved in GaAs/Ge/GaAs heterostructures grown on the (113)A GaAs substrate. In this research, we investigated AlAs/Ge/AlAs heterostructures grown on (113)A and (113)B GaAs substrates by MBE. SR was achieved in AlAs/Ge/AlAs heterostructures grown on the (113)A GaAs substrate.