Evaluation of strain in InAs thin films grown on Si (111) by Raman spectroscopy

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

4:45 PM - 5:00 PM

〇Fumiya Kanbayashi¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

Keywords:InAs, Raman spectroscopy