Polarization dependent PL from (001) GaAsBi/GaAs MQW grown by two substrate temperature growth

Homare Kambara

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

5:15 PM - 5:30 PM

[18p-234B-15] Polarization dependent PL from (001) GaAsBi/GaAs MQW grown by two substrate temperature growth

〇Homare Kambara¹ (1.Ehime Univ.)

Keywords:polalization, surface segregation, GaAsBi/GaAs

Similar polarized PL measurements were carried out in a GaAs Bi / GaAs quantum well with very small surface segregation by the two temperature growth method, and the polarized PL spectra of samples with large surface segregation and samples with little surface segregation were compared.