[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-16] PL polarization characteristics of GaAs/GaAsBi quantum well on (411)A GaAs substrate

〇Takumi Yamamoto¹, Toui Higuti¹, Akira Tukamoto¹, Saburo Tanaka¹, Homare Kanbara¹, Satoshi Shimomura¹ (1.Ehime Univ.)

Keywords:Polarization characteristics, Pl characteristics, GaAsBi/GaAs

Polarization characteristics of GaAsBi / GaAs quantum well on (411) A plane grown simultaneously with (100) GaAsBi / GaAs quantum well were investigated and compared with Polarization characteristics of (100) GaAsBi / GaAs quantum well. As a result,The (411) A quantum well is approximately equal to the degree of polarization P = 0.25 on the short wavelength side peak and the polarization degree P = 0.22 in the (100) quantum well. Furthermore, the degree of polarization of the peak on the long wavelength side of the (411) A quantum well has large polarization of P = 0.33.