The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

3:45 PM - 4:00 PM

[18p-234B-10] Photon upconversion via submonolayer InAs structures

〇Hiroto Mizuno1, Zhang Yuwei1, Itaru Kamiya1 (1.Toyota Tech. Inst.)

Keywords:Quantum Dot, submonolayer growth

InAs / GaAs submonolayer (SML) growth has attracted attention for the growth of quantum structures such as those applied for solar cells. Samples with different SML sequences are prepared by MBE and studied by RHEED, AFM and PL. Here, we prepared structures that contain both SML layers and quantum wells to elucidate the carrier dynamics of up-converted PL.