3:30 PM - 3:45 PM
[18p-234B-9] Morphology change of strain-engineered stacked InAs quantum dots with modulated interlayers
Keywords:InAs quantum dots, strain relaxation, electronic states
We have already shown luminescence exceeding 1.55 µm from InAs QDs on GaAs by strain relaxation at both RT an 4K.
However, in this structure, we need to thicken the cap InGaAs thin film layer for device applications.
In addition, we reported that the strain can be further relaxed by using InGaAs as the sublying layer resulting in redshift of PL. However, the details of the role of the InGaAs layer are not clear.
Here, we report the change in the morphology of QDs in a structure with modulated interlayers.
However, in this structure, we need to thicken the cap InGaAs thin film layer for device applications.
In addition, we reported that the strain can be further relaxed by using InGaAs as the sublying layer resulting in redshift of PL. However, the details of the role of the InGaAs layer are not clear.
Here, we report the change in the morphology of QDs in a structure with modulated interlayers.