The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

3:15 PM - 3:30 PM

[18p-234B-8] Effects of GaAs-capping temperature on the emission wavelength of InAs quantum dots on nitrogen-doped GaAs (001) surfaces

〇Toshiyuki Kaizu1,2, Naoto Uenishi1, Takashi Kita1 (1.Grad. Sch. of Eng., Kobe Univ., 2.CSREA, Kobe Univ.)

Keywords:quantum dot, nitrogen doping, emission wavelength