Effect of InAs underlying layers on formation of InAs quantum dots on InAlAs/InP(111)A by droplet epitaxy

Takaaki Mano; Neul Ha; Takashi Kuroda; Akihiro Ohtake; Takeshi Noda; Kazuaki Sakoda

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19p-PB6-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 19, 2018 4:00 PM - 6:00 PM PB (Shirotori Hall)

4:00 PM - 6:00 PM

[19p-PB6-5] Effect of InAs underlying layers on formation of InAs quantum dots on InAlAs/InP(111)A by droplet epitaxy

〇Takaaki Mano¹, Neul Ha¹, Takashi Kuroda¹, Akihiro Ohtake¹, Takeshi Noda¹, Kazuaki Sakoda¹ (1.NIMS)

Keywords:Quantum dot, Droplet Epitaxy, Self-assembly

We investigated the effect of InAs underlying layers on formation of InAs quantum dots on InAlAs/InP(111)A by droplet epitaxy. We found that the diffusiton of InAs from the QDs can be controled by the coverage of the InAs underlying layers.