[19p-PB6-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19p-PB6-1] Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B GaAs

〇Takuya Kawazu¹, Takeshi Noda¹, Yoshiki Sakuma¹ (1.NIMS)

Keywords:semiconductor, quantum wire, optical anisotropy

We investigated the optical anisotropy of InGaAs quantum wire (QWR) arrays on vicinal (111)B GaAs. The studies of polarized photoluminescence (PL) showed that the PL is polarized preferentially along [1-10], where the polarization degree ρ is about 9.4 %. We also theoretically studied the electronic states of the InGaAs QWR arrays to clarify how the optical anisotropy is affected by (1) the corrugated structure, (2) the strain effect including piezoelectricity, and (3) the thickness difference of the InGaAs layers on the two facets of the corrugated structure. ρ for the corrugated structure is almost same as that for a flat quantum well structure. In contrast, the strain effects and the thickness difference result in the increases of ρ by about 1.9 and 2.5 times. By comparing the calculated results to the experimental data, we found that the effects of the strain and the thickness difference are important to explain the optical anisotropy of the InGaAs QWR arrays.