2:30 PM - 2:45 PM
△ [18p-234B-6] First-principles study of the influence of N atomic configuration on the band structure of GaAsN
Keywords:first principle caluculation, GaAsN
Presentation information
Oral presentation
15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
[18p-234B-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)
Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)