2018年第79回応用物理学会秋季学術講演会

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6 薄膜・表面 » 6.4 薄膜新材料

[18p-PA2-1~20] 6.4 薄膜新材料

2018年9月18日(火) 13:30 〜 15:30 PA (イベントホール)

13:30 〜 15:30

[18p-PA2-5] Low temperature processed high conductive Nb doped titanium oxide thin film deposited by RF magnetron sputtering

〇(P)Xuemei Cheng1、Kazuhiro Gotoh1、Noritaka Usami1 (1.Nagoya University)

キーワード:Transparent conductive oxide, Selective contact, RF sputtering

High conductive Nb doped titanium oxide (TiO2:Nb) thin films are obtained on alkali-free glass substrate under optimized deposition conditions during RF magnetron sputtering and low temperature post annealing processes. The optical and electrical properties are studied through optimizing the deposition pressure from 0.2 to 1 Pa and post annealing processes (temperature and time). A significant improvement of electrical conductivity of TiO2:Nb thin film is obtained when the deposition pressure is 0.4 Pa and annealed at 150 °C with 5min, leading to the highest conductivity of 10.2 S/m, giving a great potential as an electron selective contact for dopant-free Si solar cells as well as a transparent conductive oxide material.