[18p-PA5-1~28] 12.4 Organic light-emitting devices and organic transistors

[18p-PA5-15] Analysis of α-(BEDT-TTF)₂I₃ Phase Transition Transistor by Simultaneous 2- and 4-terminal FET Measurements

〇Hiroto Ishimine¹, Takahiro Ueda¹, Teruki Sano¹, Yugo Okada^1,2, Hiroshi Yamauchi¹, Masatoshi Sakai¹, Kazuhiro Kudo¹ (1.Chiba Univ., 2.Center for Frontier Science)

Keywords:strongly correlated electrons, phase transition transistor, 4-terminal measurement

In phase transition transistors that control the electronic phase of a strongly correlated electrons by field effect carrier injection, large response and high speed operation are expected. We fabricated FETs using a-(BEDT - TTF)₂I₃ single crystal which undergoes metal - insulator transition at 135 K. We carried out 2 - and 4 - terminal measurements simultaneously. Characteristics of the phase transition transistor were clearly seen in the 4 - terminal measurement. However, in the 2 - terminal measurement, the appearance of the gate voltage modulation was unclear. Therefore, it was confirmed that 4-terminal measurement is crucial in the analysis of the phase transition transistor.