4:00 PM - 6:00 PM
[18p-PA5-15] Analysis of α-(BEDT-TTF)2I3 Phase Transition Transistor by Simultaneous 2- and 4-terminal FET Measurements
Keywords:strongly correlated electrons, phase transition transistor, 4-terminal measurement
In phase transition transistors that control the electronic phase of a strongly correlated electrons by field effect carrier injection, large response and high speed operation are expected. We fabricated FETs using a-(BEDT - TTF)2I3 single crystal which undergoes metal - insulator transition at 135 K. We carried out 2 - and 4 - terminal measurements simultaneously. Characteristics of the phase transition transistor were clearly seen in the 4 - terminal measurement. However, in the 2 - terminal measurement, the appearance of the gate voltage modulation was unclear. Therefore, it was confirmed that 4-terminal measurement is crucial in the analysis of the phase transition transistor.