[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-14] Photoluminescence properties from SiO₂/Ga₂O₃/GaN structure formed with remote plasma

〇Noriharu Takada¹, Noriyuki Taoka², Akio Ohta¹, Taishi Yamamoto^1,2, Truyen Nguyen Xuan^1,2, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu^2,3, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL, 3.Nagoya Univ. IMaSS)

Keywords:GaN, Photoluminescence, Defect

Si-doped GaN surface was oxidized by remote plasma. In order to reveal the oxidation mechanism and the interface state, we examined the photoluminescence characteristics. From PL measurement results, it was found that intensity and photon energy of UV peak decreased clearly by oxidation. However, after deposition of SiO₂ film on Ga-oxidation layer, the values of intensity and photon energy were close in the values before oxidation. This work was partly supported by NEDO.