[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-15] Evaluation of Ga-oxide layers on GaN layer surface and MOS interface by XPS

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Daisuke Mori¹, Hirotaka Suda¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:semiconductor, GaN, XPS

We reported at the previous meeting that mobility in SiO2 /GaN MOSFET is related to interface GaOx layer thickness. In this meeting, the thickness of this interface layer was evaluated by XPS. It was found that the deposition process of the SiO2 film has the greatest influence on the interface layer thickness in the MOS fabrication process.