[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

[18p-PA6-19] High breakdown voltage of n-GaN MOS capacitors with HfSiO_x insulator

〇Erika Maeda^1,2, Toshihide Nabatame², Kazuya Yuge^1,2, Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji shiozaki³, Tomoji Ohishi¹ (1.SIT, 2.NIMS, 3.NU)

Keywords:GaN, HfSiOx, power device